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FDD6530A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6530A
समारोह 20V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6530A?> डेटा पत्रक पीडीएफ

FDD6530A pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 10 V
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
ID(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 8 A
VGS = 2.5 V, ID = 6.6 A
VGS = 4.5 V, ID = 8 A, TJ = 125°C
VGS = 4.5 V, VDS = 5 V
gFS Forward Transconductance
VDS = 5 V,
ID = 8 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 10 V,
VGS = 4.5 V
ID = 8 A,
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.7 A (Note 2)
Voltage
Min Typ Max Units
55 mJ
8A
20
15
V
mV/°C
1
100
–100
µA
nA
nA
0.4 0.9 1.2
V
–3 mV/°C
26 32 m
36 47
36 48
20 A
21 S
710 pF
173 pF
84 pF
8 16
7 14
18 32
48
6.5 9
1.3
1.9
ns
ns
ns
ns
nC
nC
nC
2.7
0.8 1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6530A Rev. C (W)

विन्यास 5 पेज
डाउनलोड[ FDD6530A Datasheet.PDF ]


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FDD6530A20V N-Channel PowerTrench MOSFETFairchild Semiconductor
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