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FDD6512A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6512A
समारोह 20V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6512A?> डेटा पत्रक पीडीएफ

FDD6512A pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 10 V, ID=10A
IAS Drain-Source Avalanche Current
90 mJ
10 A
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 16 V,
VGS = 12 V,
VGS = –12 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
20
14
V
mV/°C
10
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
0.6 0.8
–3.2
1.5 V
mV/°C
VGS = 4.5 V, ID = 10.7 A
VGS = 2.5 V, ID = 9.1 A
VGS = 4.5 V, ID = 10.7 A, TJ=125°C
16 21 m
21 31
22 29
VGS = 4.5 V, VDS = 5 V
50
A
VDS = 5 V,
ID = 10.7 A
50 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
1082
277
130
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
VDS = 10V,
VGS = 4.5 V
ID = 10.7 A,
8 16
8 16
24 38
8 16
12 19
2
3
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
2.3 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2)
0.72 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Scale 1 : 1 on letter size paper
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6512A/FDU6512A Rev. B (W)

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डाउनलोड[ FDD6512A Datasheet.PDF ]


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FDD6512A20V N-Channel PowerTrench MOSFETFairchild Semiconductor
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