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FDD603AL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor

भाग संख्या FDD603AL
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD603AL?> डेटा पत्रक पीडीएफ

FDD603AL pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 12 A
100 mJ
IAR Maximum Drain-Source Avalanche Current
12 A
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
30
V
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
32 mV/°C
10 µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 9.5 A
VGS = 10 V, ID = 9.5 A,TJ=125°C
VGS = 4.5 V, ID = 7.5 A
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 9.5 A
1 1.7
-4.5
3V
mV/°C
0.016 0.023
0.024 0.035
0.026 0.037
60
18
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
670 pF
345 pF
95 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A
VGS = 10 V, RGEN = 6
VDS =10 V, ID = 9.5 A
VGS = 10 V,
10 20 ns
16 30 ns
27 45 ns
12 22 ns
19 26 nC
3.5 nC
5.5 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current ( Note 1)
33 A
VSD Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A
(Note 2)
0.78 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJC has been used to determine some maximum ratings.
a) RθJA= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
b) RθJA= 96oC/W on a minimum
mounting pad.
FDD603AL, Rev. B

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FDD603ALN-Channel Logic Level Enhancement Mode Field Effect TransistorFairchild Semiconductor
Fairchild Semiconductor


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