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FDD6030L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor

भाग संख्या FDD6030L
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6030L?> डेटा पत्रक पीडीएफ

FDD6030L pdf
Electrical Characteristics TC=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
10
100
-100
ON CHARACTERISTICS (Note 2)
VGS(TH)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
13
0.0135
0.0200
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Notes:
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.7 A
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
2.7
1.2
V
µA
nA
nA
V
A
V
a) RθJA= 40oC/W when mounted on a
1 in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted on
a 0.076 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6030L Rev. A1

विन्यास 6 पेज
डाउनलोड[ FDD6030L Datasheet.PDF ]


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