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FDD6030BL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrenchTM MOSFET - Fairchild Semiconductor

भाग संख्या FDD6030BL
समारोह N-Channel PowerTrenchTM MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6030BL?> डेटा पत्रक पीडीएफ

FDD6030BL pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V
IAR Drain-Source Avalanche Current
Off Characteristics
BV DSS
BV DSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V,
VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, V DS = 0 V
130 mJ
10 A
30
22
V
mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
1 1.6 3
V
–4 mV/°C
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
ID = 10 A
ID = 8.4 A
ID = 10 A, TJ=125°C
12 16
17 22
19 26
m
VGS = 10 V, VDS = 5 V
50
A
VDS = 10 V, ID = 10 A
29 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1143
249
107
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15V,
VGS = 10 V
ID = 10 A,
6 12
10 18
18 29
5 12
22 31
3
4
ns
ns
ns
ns
nC
nC
nC
FDD6030BL/FDU6030BL Rev. C(W)

विन्यास 6 पेज
डाउनलोड[ FDD6030BL Datasheet.PDF ]


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