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FDD5690 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD5690
समारोह 60V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD5690?> डेटा पत्रक पीडीएफ

FDD5690 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 30 A
Maximum Drain-Source Avalanche Current
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 20V, VDS = 0 V
VGS = -20 V, VDS = 0 V
60
90 mJ
30 A
V
57 mV/°C
1 µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 9 A
VGS = 10 V, ID = 9 A, TJ = 125°C
VGS = 6 V, ID = 8 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 9 A
2 2.5
-6
4V
mV/°C
0.023
0.032
0.026
0.027
0.048
0.032
25
24
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
1110
150
75
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A
VGS = 10 V, RGEN = 6
VDS = 30 V, ID = 9 A
VGS = 10 V,
10 18 ns
9 18 ns
24 39 ns
10 18 ns
23 32 nC
4 nC
6.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 2.3 A
(Note 2)
Voltage
0.75
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
2.3
1.2
A
V
a) RθJA= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD5690, Rev. B

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डाउनलोड[ FDD5690 Datasheet.PDF ]


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