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FDD5680 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel/ PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD5680
समारोह N-Channel/ PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD5680?> डेटा पत्रक पीडीएफ

FDD5680 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 38 A
IAR Maximum Drain-Source Avalanche Current
BVDSS
BVDSS
TJ
IDSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
ID = 250µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20V, VDS = 0 V
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
60
140 mJ
38 A
V
60 mV/°C
1 µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
2
VGS = 10 V, ID = 8.5 A
VGS = 10 V, ID = 8.5 A,TJ=125°C
VGS = 6 V, ID = 7.5 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 8.5 A
50
2.4 4
V
-6.4 mV/°C
0.017
0.028
0.019
0.021
0.042
0.025
30
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
1835
210
90
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 30 V, ID = 8.5 A,
VGS = 10 V,
15 27 ns
9 18 ns
35 56 ns
16 26 ns
33 46 nC
6.5 nC
7.5 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.3
VSD
Notes:
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A (Note 2)
0.75 1.2
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
A
V
a) RθJA= 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted
on a 0.076 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD5680, Rev. C

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डाउनलोड[ FDD5680 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDD5680N-Channel/ PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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