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FDD5612 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD5612
समारोह 60V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD5612?> डेटा पत्रक पीडीएफ

FDD5612 pdf
Electrical Characteristics TC=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
60
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V
1
IGSSF
Gate-Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
IGSSR
Gate-Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
On Characteristics (Note 2)
VGS(TH) Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6 A
VGS = 6 V, ID = 5.6 A
13
0.055
0.064
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current (Note 1)
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 2.7 A
(Note 2)
Voltage
19
1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJC has been used to determine some of the maximum ratings.
V
µA
nA
nA
V
A
V
a) RθJA= 40oC/W when mounted on a
1 in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted on
a 0.076 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD5612 Rev. A

विन्यास 5 पेज
डाउनलोड[ FDD5612 Datasheet.PDF ]


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