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FDD5202P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel/ Logic Level/ MOSFET - Fairchild Semiconductor

भाग संख्या FDD5202P
समारोह P-Channel/ Logic Level/ MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD5202P?> डेटा पत्रक पीडीएफ

FDD5202P pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = -250 µA
-60
V
BVDSS
TJ
Breakdown Voltage
Temperature Coefficient
ID = -250 µA, Referenced to 25°C
-60
mV/°C
IDSS
Zero Gate Voltage Drain
VDS = -48 V, VGS = 0 V
Current
-1 µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2 -2.3 -4
V
ID = -250 µA, Referenced to 25°C
3.2
mV/°C
VGS = -10 V, ID = -2.3 A
VGS = -10 V, ID = -2.3 A,TJ=125°C
VGS = -4.5 V, ID = -1.8 A
VGS = -10 V, VDS = -5 V
VDS = -5 V, ID = -2.3 A
-10
0.205
0.340
0.313
0.300
0.510
0.500
3
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -30 V, VGS = 0 V,
f = 1.0 MHz
560 pF
130 pF
35 pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = -30 V, ID = -1 A,
VGS = -10 V, RGEN = 6
VDS = -30 V, ID = -2.3 A,
VGS = -10 V
8
20
20
5
15.5
2.4
4.7
15
40
40
20
22
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-2.2
VSD Drain-Source Diode Forward VGS = 0 V, IS = -2.2 A (Note 2)
Voltage
-1 -1.3
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
A
V
a) RθJA= 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted on
a 0.076 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD5202P, Rev. A

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डाउनलोड[ FDD5202P Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDD5202PP-Channel/ Logic Level/ MOSFETFairchild Semiconductor
Fairchild Semiconductor


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