DataSheet.in

3SK186 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Dual Gate MOS FET - Hitachi Semiconductor

भाग संख्या 3SK186
समारोह Silicon N-Channel Dual Gate MOS FET
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=3SK186?> डेटा पत्रक पीडीएफ

3SK186 pdf
3SK186
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
12
±10
±10
35
150
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSX
12
Gate 1 to source breakdown
voltage
V(BR)G1SS ±10
Gate 2 to source breakdown
voltage
V(BR) G2SS ±10
Gate 1 cutoff current
I G1SS
Gate 2 cutoff current
I G2SS
Gate 1 to source cutoff voltage VG1S(off)
+0.5
Typ
Gate 2 to source cutoff voltage VG2S(off) +0.5 —
Drain current
Forward transfer admittance
I DSS
|yfs|
0—
15 —
Input capacitance
Ciss — 1.7
Max Unit
—V
—V
—V
±100
±100
–0.8
nA
nA
V
–0.8 V
4 mA
— mS
2.2 pF
Output capacitance
Reverse transfer capacitance
Power gain
Coss
Crss
PG
16
1.0
0.017
19
1.4
0.03
pF
pF
dB
Noise figure
Note: Marking is “FI–”.
NF — 3.0 4.5 dB
Test conditions
VG1S = VG2S = –5 V,
ID = 200 µA
IG1 = ±10 µA, VG2S = VDS = 0
IG2 = ±10 µA, VG1S = VDS = 0
VG1S = ±8 V, VG2S = VDS = 0
VG2S = ±8 V, VG1S = VDS = 0
VDS = 6 V, VG2S = 3V,
ID = 100 µA
VDS = 6 V, VG1S = 3V,
ID = 100 µA
VDS = 6 V, VG2S = 3V, VG1S = 0
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 kHz
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 MHz
VDS = 4 V, VG2S = 3V,
ID = 10 mA, f = 900 MHz
2

विन्यास 6 पेज
डाउनलोड[ 3SK186 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
3SK180High-Frequency General-Purpose Amp ApplicationsSanyo Semicon Device
Sanyo Semicon Device
3SK181N-Channel Enhancement MOS Silicon FETSanyo
Sanyo


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English