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MID100-12A3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Modules - ETC

भाग संख्या MID100-12A3
समारोह IGBT Modules
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
1 Page
		
<?=MID100-12A3?> डेटा पत्रक पीडीएफ

MID100-12A3 pdf
MII 100-12 A3 MID 100-12 A3
MDI 100-12 A3
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthJS
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 3 mA, VCE = VGE
VCE = VCES
VCE = 0 V, VGE = ±20 V
IC = 75 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive load, TJ = 125°C
IC = 75 A, VGE = ±15 V
VCE = 600 V, RG = 15 W
with heatsink compound
1200
4.5
V
6.5 V
5 mA
7.5 mA
±300 nA
2.2 2.7 V
5.5 nF
0.75 nF
0.33 nF
100 ns
50 ns
650 ns
50 ns
12.1 mJ
10.5 mJ
0.22 K/W
0.44 K/W
Dimensions in mm (1 mm = 0.0394")
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
RthJC
RthJS
IF = 75 A, VGE = 0 V,
IF = 75 A, VGE = 0 V, TJ = 125°C
TC = 25°C
TC = 80°C
IF = 75 A, VGE = 0 V, -diF/dt = 600 A/ms
TJ = 125°C, VR = 600 V
with heatsink compound
2.2 2.5 V
1.7 1.8 V
150 A
95 A
62 A
200 ns
0.45 K/W
0.9 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 13.6 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 6.5 mW
Thermal Response
© 2000 IXYS All rights reserved
IGBT (typ.)
Cth1 = 0.20 J/K; Rth1 = 0.218 K/W
Cth2 = 0.47 J/K; Rth2 = 0.005 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.14 J/K; Rth1 = 0.443 K/W
Cth2 = 0.26 J/K; Rth2 = 0.009 K/W
2-4

विन्यास 4 पेज
डाउनलोड[ MID100-12A3 Datasheet.PDF ]


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