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HP4936DY डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET - Intersil Corporation

भाग संख्या HP4936DY
समारोह 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
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<?=HP4936DY?> डेटा पत्रक पीडीएफ

HP4936DY pdf
HP4936DY
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (10µs Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
HP4936DY
30
30
±16
5.8
30
2
0.02
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TA = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA (Figure 9)
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TA = 55oC
VGS = ±16V
ID = 4.7A, VGS = 4.5V (Figures 6, 8)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
td(ON)
tr
td(OFF)
tf
Qg
Qgs
ID = 5.8A, VGS = 10V (Figures 6, 8)
VDD = 15V, ID 1A,
RL = 15, VGEN = 10V,
RGS = 6(Figures 12, 13)
VDS = 15V, VGS = 10V, ID 5.8A
(Figures 14, 15)
Gate to Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
Qgd
CISS
COSS
CRSS
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 4)
Pulse Width <10s (Figure 11)
Device Mounted on FR-4 Material
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 1.7A (Figure 7)
ISD = 1.7A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
30 - - V
1- -V
- - 1 µA
- - 25 µA
- - 100 nA
-
0.042 0.055
-
0.030 0.037
- 10 16 ns
- 10 16 ns
- 27 40 ns
- 24 35 ns
- 18 25 nC
- 4.5 - nC
- 2.5 - nC
- 625 -
pF
- 270 -
pF
- 50 - pF
-
-
62.5
oC/W
MIN TYP MAX UNITS
-
0.8 1.2
V
- 45 80 ns
8-9

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