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CT30TM-8 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STROBE FLASHER USE - Mitsubishi Electric Semiconductor

भाग संख्या CT30TM-8
समारोह STROBE FLASHER USE
मैन्युफैक्चरर्स Mitsubishi Electric Semiconductor 
लोगो Mitsubishi Electric Semiconductor लोगो 
पूर्व दर्शन
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<?=CT30TM-8?> डेटा पत्रक पीडीएफ

CT30TM-8 pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30TM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
200
CM = 1000µF
160 TC <= 50°C
120
TC =< 70°C
80
40
0
0 10 20 30 40 50
GATE-EMITTER VOLTAGE VGE (V)
Figure 1
MAXIMUM PULSE COLLECTOR CURRENT
2000
1600
1200
800
400 VCM = 350V
TC <= 70°C
VGE >= 28V
0
120 140 160 180 200 220
PULSE COLLECTOR CURRENT ICP (A)
Figure 2
APPLICATION EXAMPLE
TRIGGER Vtrig
SIGNAL
IXe
Vtrig
RG
VG
VCE
IGBT
CM
+
VCM
IGBT GATE VG
VOLTAGE
Xe TUBE Ixe
CURRENT
RECOMMEND CONDITION
VCM = 330V
IP = 160A
CM = 800µF
VGE = 28V
MAXIMUM CONDITION
360V
180A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG 30)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe 180A : full luminescence condition) of main condenser (CM=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999

विन्यास 2 पेज
डाउनलोड[ CT30TM-8 Datasheet.PDF ]


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