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TYN825 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Standard 25A SCRs - STMicroelectronics

भाग संख्या TYN825
समारोह Standard 25A SCRs
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=TYN825?> डेटा पत्रक पीडीएफ

TYN825 pdf
Characteristics
1 Characteristics
TN2540, TXN625, TYN625, TYN825, TYN1225
Symbol
Table 2. Absolute ratings (limiting values)
Parameter
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
TO-220AB,
On-state rms current (180 °Conduction angle) D2PAK
Tc = 100 °C
TO-220AB ins Tc = 83 °C
Average on-state current (180 °Conduction angle)
Tc = 100 °C
Non repetitive surge peak on-state current
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state current
IG = 2 x IGT, tr 100 ns
F = 60 Hz
Tj = 125 °C
Peak gate current
tp = 20 µs
Tj = 125 °C
Average gate power dissipation
Tj = 125 °C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Value
25
16
314
300
450
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
Symbol
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Value
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 x IGT
VD = 67% VDRM Gate open
ITM = 50 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
4
40
1.3
0.2
50
90
1500
1.6
0.77
14
5
4
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/11 DocID7478 Rev 9

विन्यास 11 पेज
डाउनलोड[ TYN825 Datasheet.PDF ]


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