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STL12N60M6 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel Power MOSFET - STMicroelectronics

भाग संख्या STL12N60M6
समारोह N-channel Power MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STL12N60M6?> डेटा पत्रक पीडीएफ

STL12N60M6 pdf
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
IAR (2)
Avalanche current, repetitive or not repetitive
EAS (3)
Single pulse avalanche energy
dv/dt(4)
Peak diode recovery voltage slope
dv/dt(5)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Pulse width limited by Tjmax.
3. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
4. ISD ≤ 6.4 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
5. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
STL12N60M6
Electrical ratings
Value
±25
6.4
4
24
48
1.8
130
15
100
-55 to 150
Unit
V
A
A
W
A
mJ
V/ns
°C
Value
2.6
50
Unit
°C/W
DS12869 - Rev 1
page 2/15

विन्यास 15 पेज
डाउनलोड[ STL12N60M6 Datasheet.PDF ]


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