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IRF540NS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Kexin

भाग संख्या IRF540NS
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Kexin 
लोगो Kexin लोगो 
पूर्व दर्शन
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<?=IRF540NS?> डेटा पत्रक पीडीएफ

IRF540NS pdf
SMD Type
MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Internal Drain Inductance
Internal Source Inductance
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
LD
LS
Test Conditions
ID=250μA, VGS=0V
VDS=100V, VGS=0V
VDS=80V, VGS=0V, TJ=150
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=16A (Note.1)
VDS=50V, ID=16A (Note.1)
VGS=0V, VDS=25V, f=1MHz
VGS=10V, VDS=80V, ID=16A
(Note.1)
VGS=10V, VDS=50V, ID=16A,RG=5.1Ω
(Note.1)
IF= 16A, dI/dt= 100A/μs,TJ = 25°C
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
D
S
Single Pulse Avalanche Energy
Maximum Body-Diode Continuous Current
Pulsed Source Current
EAS IAS = 16A, L = 1.5mH
IS MOSFET symbol
showing the
integral reverse G
ISM p-n junction diode.
D
S
Min Typ Max Unit
100 V
25
uA
250
±100 nA
2 4V
44 mΩ
21 S
1960
250 pF
40
71
14 nC
21
11
35
39 ns
35
115 170
505 760 nC
4.5
nH
7.5
185 mJ
33
A
110
Diode Forward Voltage
VSD
Note.1: Pulse width ≤ 400μs; duty cycle ≤ 2%.
IS=16A,VGS=0V,TJ = 25°C
1.2 V
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डाउनलोड[ IRF540NS Datasheet.PDF ]


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