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H06N60U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Field Effect Transistor - HI-SINCERITY

भाग संख्या H06N60U
समारोह N-Channel Power Field Effect Transistor
मैन्युफैक्चरर्स HI-SINCERITY 
लोगो HI-SINCERITY लोगो 
पूर्व दर्शन
1 Page
		
<?=H06N60U?> डेटा पत्रक पीडीएफ

H06N60U pdf
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.05.12
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-263
TO-220AB
TO-220FP
62
1.7
1.7
3.3
Units
OC/W
OC/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125OC)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=3.6A)*
Forward Transconductance (VDS=15V, ID=3.6A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=300V, ID=6A, RG=9.1,
VGS=10V)*
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=480V, ID=6A, VGS=10V)*
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 - - V
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
234V
- 1 1.2
24 - S
- 1100 -
- 150 -
pF
- 25 -
- 14 -
- 19 -
ns
- 40 -
- 26 -
- 35.5 50
- 8.1 - nC
- 14.1 -
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
VSD Forward On Voltage(1)
ton Forward Turn-On Time
trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=6A, VGS=0V, TJ=25oC
IS=6A, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.2 V
- ** - ns
- 266 -
ns
H06N60U, H06N60E, H06N60F
HSMC Product Specification

विन्यास 6 पेज
डाउनलोड[ H06N60U Datasheet.PDF ]


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