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FZ600R12KP4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Module - Infineon

भाग संख्या FZ600R12KP4
समारोह IGBT Module
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
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<?=FZ600R12KP4?> डेटा पत्रक पीडीएफ

FZ600R12KP4 pdf
FZ600R12KP4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
IC nom 
ICRM 
VGES 
1200
600
1200
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 23,0 mA, VCE = VGE, Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 60 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 5500 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,2
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 60 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,2
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,70 2,05
2,00
2,10
V
V
V
VGEth 5,20 5,80 6,40 V
QG 5,60 µC
RGint
1,3
Cies 42,0 nF
Cres 1,70 nF
ICES 5,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
400 nA
0,24 µs
0,25 µs
0,26 µs
0,09 µs
0,10 µs
0,11 µs
0,61 µs
0,64 µs
0,66 µs
0,14 µs
0,17 µs
0,18 µs
35,0 mJ
50,0 mJ
55,0 mJ
75,0 mJ
100 mJ
105 mJ
2400
A
0,0480 K/W
RthCH
0,0250
K/W
Tvj op
-40
150 °C
Datasheet
2 V3.0
2017-03-22

विन्यास 8 पेज
डाउनलोड[ FZ600R12KP4 Datasheet.PDF ]


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