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FF650R17IE4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT-Module - Infineon

भाग संख्या FF650R17IE4
समारोह IGBT-Module
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=FF650R17IE4?> डेटा पत्रक पीडीएफ

FF650R17IE4 pdf
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF650R17IE4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1700
650
930
1300
4,15
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 2,7
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
2,00 2,45
2,35 2,80
2,45
V
V
V
5,2 5,8 6,4 V
 7,00  µC
 2,3 
 54,0  nF
 1,70  nF
  5,0 mA
  400 nA
0,55
 0,60 
0,60
µs
µs
µs
0,09
 0,11 
0,12
µs
µs
µs
1,00
 1,25 
1,30
µs
µs
µs
0,29
 0,49 
0,57
µs
µs
µs
205 mJ
 300  mJ
320 mJ
140 mJ
 205  mJ
230 mJ
 2700 
A
  36,0 K/kW
 14,0
K/kW
-40  150 °C
preparedby:TA
approvedby:PL
dateofpublication:2013-11-05
revision:3.3
2

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डाउनलोड[ FF650R17IE4 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FF650R17IE4IGBT-ModuleInfineon
Infineon


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