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FDN5632N-F085 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level PowerTrench MOSFET - ON Semiconductor

भाग संख्या FDN5632N-F085
समारोह N-Channel Logic Level PowerTrench MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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<?=FDN5632N-F085?> डेटा पत्रक पीडीएफ

FDN5632N-F085 pdf
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 48V,
VGS = 0V
TA = 125oC
VGS = ±20V
60
-
-
-
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 1.7A, VGS= 10V
ID = 1.6A, VGS= 6V
ID = 1.6A, VGS= 4.5V
ID =
TA =
11.570Ao,CVGS=
10V,
1
-
-
-
Ciss
Coss
Crss
RG
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VDD = 20V
ID = 1.7A
Electrical Characteristics TA = 25oC unless otherwise noted
Symbol
Parameter
Switching Characteristics
Test Conditions
-
-
-
-
-
-
-
Min
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 30V, ID = 1.0A
VGS = 10V, RGEN = 6Ω
-
-
-
-
-
-
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 1.7A
ISD = 0.85A
ISD = 1.7A, dISD/dt = 100A/μs
-
-
-
-
Typ Max Units
- -V
-
-
1
250
μA
- ±100 nA
2.0 3
V
57 82
62 88
70 98 mΩ
107 135
475 -
60 -
30 -
1.4 -
9.2 12
1.5 -
1.4 -
pF
pF
pF
Ω
nC
nC
nC
Typ Max Units
- 30 ns
15 - ns
1.7 - ns
5.2 - ns
1.3 - ns
- 12.9 ns
0.8
0.8
16.0
7.9
1.25
1.0
21
10.3
V
ns
nC
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डाउनलोड[ FDN5632N-F085 Datasheet.PDF ]


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