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FZ600R65KF2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT-Module - Infineon

भाग संख्या FZ600R65KF2
समारोह IGBT-Module
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=FZ600R65KF2?> डेटा पत्रक पीडीएफ

FZ600R65KF2 pdf
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ600R65KF2
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 125°C
Tvj = 25°C
Tvj = -50°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom 
ICRM 
Ptot 
VGES 
6500
6300
5700
600
1200
11,5
+/-20
V
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 100 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V, VCE = 3600V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 6500 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 3600 V
VGE = ±15 V
RGon = 4,3 , CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 600 A, VCE = 3600 V
VGE = ±15 V
RGon = 4,3 , CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 3600 V
VGE = ±15 V
RGoff = 30 , CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 600 A, VCE = 3600 V
VGE = ±15 V
RGoff = 30 , CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 600 A, VCE = 3600 V, LS = 280 nH
VGE = ±15 V
RGon = 4,3 , CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 600 A, VCE = 3600 V, LS = 280 nH
VGE = ±15 V
RGoff = 30 , CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 4400 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
4,30 4,90
5,30 5,90
V
V
6,4 7,0 8,1 V
 8,40  µC
 0,75 
 84,0  nF
   nF
 0,6  mA
  400 nA
0,75
 0,72 
µs
µs
0,37
 0,40 
µs
µs
5,50
 6,00 
µs
µs
0,40
 0,50 
µs
µs
 5900 
mJ
mJ
 3500 
mJ
mJ
 3000 
A
  11,0 K/kW
 9,10
K/kW
-50  125 °C
preparedby:TD
approvedby:DTS
dateofpublication:2013-11-25
revision:3.1
2

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डाउनलोड[ FZ600R65KF2 Datasheet.PDF ]


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