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HY1720P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HUAYI

भाग संख्या HY1720P
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HUAYI 
लोगो HUAYI लोगो 
पूर्व दर्शन
1 Page
		
<?=HY1720P?> डेटा पत्रक पीडीएफ

HY1720P pdf
HY1720P/B
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Source Current-Continuous(Body Diode) Tc=25°C
Mounted on Large Heat Sink
IDM Pulsed Drain Current *
Tc=25°C
ID Continuous Drain Current
Tc=25°C
Tc=100°C
PD Maximum Power Dissipation
Tc=25°C
Tc=100°C
RJC Thermal Resistance, Junction-to-Case
RJA Thermal Resistance, Junction-to-Ambient **
EAS Single Pulsed-Avalanche Energy ***
L=0.3mH
Note: *
**
***
Repetitive ratingpulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
Limited by TJmax , starting TJ=25°C, L = 0.3mH, VDS=100V, VGS =10V.
Rating
200
±20
175
-55 to 175
64
250
64
46
263
131
0.57
62
575
Unit
V
V
°C
°C
A
A
A
A
W
W
°C/W
°C/W
mJ
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
VGS(th) Gate Threshold Voltage
IGSS Gate-Source Leakage Current
RDS(ON)* Drain-Source On-State Resistance
Diode Characteristics
VSD*
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1720
Min Typ. Max
Unit
VGS=0V,IDS=250μA
VDS=200V,VGS=0V
TJ=125°C
VDS=VGS, IDS=250μA
VGS=±20V,VDS=0V
VGS=10V,IDS=30A
200
-
-
3.0
-
-
--
- 1.0
- 50
3.8 5.0
- ±100
27 32
V
μA
μA
V
nA
ISD=30A,VGS=0V
ISD=30A,dISD/dt=100A/μs
-
-
-
0.85 1.3
48 -
78 -
V
ns
nC
www.hymexa.com
2
V1.0

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डाउनलोड[ HY1720P Datasheet.PDF ]


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