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HY1906C2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel Enhancement Mode MOSFET - HUAYI

भाग संख्या HY1906C2
समारोह Single N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HUAYI 
लोगो HUAYI लोगो 
पूर्व दर्शन
1 Page
		
<?=HY1906C2?> डेटा पत्रक पीडीएफ

HY1906C2 pdf
HY1906C2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Junction Temperature Range
TSTG
Storage Temperature Range
IS Source Current-Continuous(Body Diode) Tc=25°C
Mounted on Large Heat Sink
IDM Pulsed Drain Current *
Tc=25°C
ID Continuous Drain Current
Tc=25°C
Tc=100°C
PD Maximum Power Dissipation
Tc=25°C
Tc=100°C
RJC Thermal Resistance, Junction-to-Case
RJA Thermal Resistance, Junction-to-Ambient **
EAS SinglePulsed-Avalanche Energy ***
L=0.1mH
Note: * Repetitive ratingpulse width limited by max.junction temperature.
** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.1mH, RG =25Ω., VGS =10V.
Rating
60
±25
-55 to 175
-55 to 175
70
260
70
49.5
57.7
28.8
2.6
35
286.6
Unit
V
V
°C
°C
A
A
A
A
W
W
°C/W
°C/W
mJ
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
VGS(th) Gate Threshold Voltage
IGSS
RDS(ON)
Gate-Source Leakage Current
Drain-Source On-State Resistance
Diode Characteristics
VSD*
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1906
Min Typ. Max
Unit
VGS=0V,IDS=250μA
VDS=60V,VGS=0V
TJ=125°C
VDS=VGS, IDS=250μA
VGS=±25V,VDS=0V
VGS=10V,IDS=20A
60
-
-
2
-
-
- -V
- 1 μA
- 50 μA
3 4V
- ±100 nA
5.7 6.5 mΩ
ISD=20A,VGS=0V
ISD=20A,dISD/dt=100A/μs
-
-
-
0.8 1.2
V
50 - ns
95 - nC
www.hymexa.com
2
V1.0

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डाउनलोड[ HY1906C2 Datasheet.PDF ]


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