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STD11N60M2-EP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel Power MOSFET - STMicroelectronics

भाग संख्या STD11N60M2-EP
समारोह N-channel Power MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STD11N60M2-EP?> डेटा पत्रक पीडीएफ

STD11N60M2-EP pdf
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 7.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR; VDD = 50 V)
STD11N60M2-EP
Electrical ratings
Value
±25
7.5
4.7
30
85
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
1.47
50
Unit
°C/W
°C/W
Value
2.4
115
Unit
A
mJ
DS10957 - Rev 3
page 2/17

विन्यास 17 पेज
डाउनलोड[ STD11N60M2-EP Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
STD11N60M2-EPN-channel Power MOSFETSTMicroelectronics
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