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STD14NM50NAG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - STMicroelectronics

भाग संख्या STD14NM50NAG
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD14NM50NAG?> डेटा पत्रक पीडीएफ

STD14NM50NAG pdf
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
STD14NM50NAG
Electrical ratings
Value
500
±25
12
8
48
90
15
-55 to 150
Unit
V
V
A
A
A
W
V/ns
°C
Value
1.39
50
Unit
°C/W
°C/W
Value
4
172
Unit
A
mJ
DS12786 - Rev 1
page 2/16

विन्यास 16 पेज
डाउनलोड[ STD14NM50NAG Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STD14NM50NAGN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics


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