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STD11N50M2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - STMicroelectronics

भाग संख्या STD11N50M2
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STD11N50M2?> डेटा पत्रक पीडीएफ

STD11N50M2 pdf
STD11N50M2, STF11N50M2
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
dv/dt (3)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads
to external heat sink (t=1 s; TC = 25 °C)
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 8 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 400 V.
Value
DPAK
TO-220FP
±25
8
5
32
85 25
15
50
2.5
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
kV
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
Rthj-amb
Thermal resistance junction-ambient
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
DPAK
TO-220FP
1.47 5
50
62.5
Unit
°C/W
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2
190
Unit
A
mJ
DS10177 - Rev 3
page 2/22

विन्यास 22 पेज
डाउनलोड[ STD11N50M2 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STD11N50M2N-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics


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