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STD12N50M2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - STMicroelectronics

भाग संख्या STD12N50M2
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STD12N50M2?> डेटा पत्रक पीडीएफ

STD12N50M2 pdf
STD12N50M2
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
dv/dt (3) MOSFET dv/dt ruggedness
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 10 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 400 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
±30
10
7
40
85
15
50
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
1.47
50
Unit
°C/W
°C/W
Value
3.5
204
Unit
A
mJ
DS10237 - Rev 5
page 2/18

विन्यास 18 पेज
डाउनलोड[ STD12N50M2 Datasheet.PDF ]


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