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GB10NC60K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - short-circuit rugged IGBT - STMicroelectronics

भाग संख्या GB10NC60K
समारोह short-circuit rugged IGBT
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=GB10NC60K?> डेटा पत्रक पीडीएफ

GB10NC60K pdf
Electrical ratings
1 Electrical ratings
STGB10NC60K
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES Collector-emitter voltage (VGE = 0)
600 V
IC (1) Continuous collector current at TC = 25°C
20 A
IC (1) Continuous collector current at TC = 100°C
10 A
ICL (2) Turn-off latching current
30 A
ICP (3) Pulsed collector current
t(s)VGE Gate-emitter voltage
cPTOT Total dissipation at TC = 25°C
duTSTG Storage temperature
roTJ Operating junction temperature
te PtSCW
Short-circuit withstand time (VCE = 0.5 VCES,
TJ = 125 °C, RG = 10 Ω, VGE = 12 V)
le1. Calculated according to the iterative formula:
30
±20
65
– 55 to 150
10
bsoIC(TC)
=
-------------------------------------T---j--(--m----a---x---)---–----T----C--------------------------------------
Rthj c × VCE(sat)(max)(Tj(max), IC(TC))
- O2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C
t(s)3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
ducTable 3. Thermal data
roSymbol
Parameter
te PRthJC
Obsole RthJA
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1.9
62.5
A
V
W
°C
µs
Unit
°C/W
°C/W
2/11 Doc ID 11842 Rev 4

विन्यास 11 पेज
डाउनलोड[ GB10NC60K Datasheet.PDF ]


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