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F10N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 10A 600V N-channel Enhancement Mode Power MOSFET - ROUM

भाग संख्या F10N60
समारोह 10A 600V N-channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स ROUM 
लोगो ROUM लोगो 
पूर्व दर्शन
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<?=F10N60?> डेटा पत्रक पीडीएफ

F10N60 pdf
F10N60
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
3.13
62.5
Unit
/W
/W
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-source Breakdown
Voltage
Drain-to-Source Leakage
Current
BVDSS
IDSS
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
On Characteristics(Note 3)
IGSSF
IGSSR
Gate Threshold Voltage
VGS(th)
Drain-source on
Resistance
RDS(on)
Dynamic Characteristics(Note 4)
Forward Transfer
Conductance
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain(“Miller”)
Charge
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage(N
ote 3)
VFSD
Diode Forward Current(N
ote 2)
IS
Test Condition
ID=250μA,VGS=0V
VDS=600V,VGS=0V,TC=25
VDS=480V,VGS=0V,TC=125
VGS=+30V
VGS=-30V
VDS=VGS,ID=250μA
VGS=10V,ID=5A
VDS=15V,ID=5A
VGS=0V,VDS=25V,f=1.0MHz
ID=10A,
VDD=300V,
RG=10Ω
ID=10A,VDD=480V,VGS=10V
VGS=0V,IS=10A
Value
Min Typ Max
600 -- --
-- --
1
-- -- 100
-- -- 100
-- -- -100
2 -- 4
-- 0.68 0.9
-- 9.5 --
-- 1609 --
-- 136 --
-- 7.5 --
-- 26 --
-- 23 --
-- 49 --
-- 27 --
-- 32 --
-- 8 --
-- 12 --
-- -- 1.5
-- -- 10
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nS
nS
nS
nC
V
A
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 2 of 11
Rev. 1.0

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