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IRF542FI डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR - STMicroelectronics

भाग संख्या IRF542FI
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=IRF542FI?> डेटा पत्रक पीडीएफ

IRF542FI pdf
IRF 540/FI - 541/FI - 542/FI - 543/FI
THERMAL DATA·
Rthj _ease Thermal resistance junction-case
Rthe-s Thermal resistance case-sink
Rthj-amb Thermal resistance junction-ambient
TI Maximum lead temperature for soldering purpose
TO-220 IISOWATT220
max
1 1 3.12
typ 0.5
max 80
300
°CIW
°CIW
°CIW
°C
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameters
Test Conditions
OFF
~BR) oss Drain-source
breakdown voltage
10= 250/-tA
VGs= 0
for IRF540/542/540FII542FI
for IRF541 1543/541 FII543FI
loss Zero gate voltage
Vos = Max Rating
drain current (VGS = 0) Vos = Max Rating x 0.8 Te= 125°C
IGSS Gate-body leakage
current (VOS = 0)
VGs= ±20 V
100
80
V
V
250 /-t A
1000 /-t A
±500 nA
ON **
VGS (th)
10(on)
Gate threshold voltage Vos = VGS
10= 250/-tA
On-state drain current Vos > 10 (on) X RoS(on) max VGs =10V
for IRF540/541/540FII541 FI
for IRF542/543/542FII543FI
Ros (on) Static drain-source
on resistance
VGs= 10 V
10= 17 A
for IRF540/541/540FII541 FI
for IRF542/543/542FII543FI
2
28
25
4V
A
A
0.077 0
0.100 0
DYNAMIC
gfs ** Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Vos > 10 (on) X Ros (on) max
10= 17 A
Vos= 25 V
VGs= 0
f = 1 MHz
8.7
mho
1600 pF
800 pF
300 pF
SWITCHING
td (on)
tr
td (off)
tf
Og
Turn-on time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Voo= 30 V
10= 15 A
Ri= 4.70
(see test circuit)
VGS= 10 V
10= 28 A
Vos= Max Rating x 0.8
(see test circuit)
30 ns
60 ns
80 ns
30 ns
59 nC
- - - - - - - - - - - - - -!W._2/_6_ _ _ _ _ _ _ _ _ _ _ _ _
~~~~m?1Y~:~~©~
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