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T2050H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20A high temperature Snubberless Triacs - STMicroelectronics

भाग संख्या T2050H
समारोह 20A high temperature Snubberless Triacs
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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T2050H pdf
Characteristics
T2035H, T2050H
1 Characteristics
Symbol
Table 2: Absolute ratings (limiting values)
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dl/dt
VDSM /
VRSM
IGM
PG(AV)
Tstg
Tj
RMS on-state current
(full sine wave)
D²PAK,
TO-220AB
TO-220AB Ins.
Non repetitive surge peak
on-state current
(full cycle, Tj initial = 25 °C)
I²t value for fusing
f = 50 Hz
f = 60 Hz
Critical rate of rise of on-state
current
IG = 2 x IGT , tr ≤ 100 ns
Non repetitive surge peak
off-state voltage
f = 120 Hz
tp = 10 ms
Peak forward gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TC = 128 °C
TC = 108 °C
tp = 20 ms
tp = 16.7 ms
tp = 10 ms
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
20 A
200
A
210
265 A²s
50 A/µs
VDRM/VRRM +
100
4
1
-40 to +150
-40 to +150
V
A
W
°C
°C
Symbol
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Test Conditions
Quadrant
Value
T2035H T2050H
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 500 mA
I - II - III
I - II - III
Max.
Max.
Min.
Max.
35 50
1.0
0.15
35 75
IL IG = 1.2 x IGT
I - III
II
Max.
50
80
90
110
dV/dt(2) VD = 2/3 x VDRM, gate open
Tj = 150 °C Min. 1000
1500
(dI/dt)c(2) Without snubber
Tj = 150 °C Min.
27
36
Unit
mA
V
mA
mA
V/µs
A/ms
Notes:
(1)Minimum IGT is guaranteed at 20% of IGT max.
(2)For both polarities of A2 referenced to A1.
2/12 DocID13575 Rev 4

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