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HM4803 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM4803
समारोह Dual P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HM4803?> डेटा पत्रक पीडीएफ

HM4803 pdf
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-55V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
Forward Transconductance
gFS VDS=-15V,ID=-5A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=-20V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=-30V, ,RL=30
VGS=-10V,RGEN=6
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf
Qg
Qgs
VDS=-30V,ID=-5A,
VGS=-10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=-3A
Diode Forward Current (Note 2)
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
HM4803
42 /W
Min Typ Max Unit
-55 -
--
--
-
1
±100
V
μA
nA
-1.5 -2.6
- 64
16 -
-3.5
80
-
V
m
S
- 1450
- 145
- 110
-
-
-
PF
PF
PF
-8
-9
- 65
- 30
- 26
- 4.5
-7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
-5
V
A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.0

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डाउनलोड[ HM4803 Datasheet.PDF ]


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