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N0882NC420 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या N0882NC420
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
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N0882NC420 pdf
Technical Data :
ELECTRICAL CHARACTERISTICS AND RATINGS
Thyristor
Page 2 of 3
N0882NC420- Power
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
300
150
125
5
3
0.30
Peak negative voltage
VGRM
5
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbol Min.
td
tq
Qrr
Max. Typ. Units Conditions
0.7 s
1.5
100 s
700
ITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 s; tp = 20 s
ITM = 1000 A; di/dt = 25 A/s;
VR -50 V; Re-applied dV/dt = 20
V/s linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle 0.01%
C ITM = 1000 A; di/dt = 25 A/s;
* VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +150
Units
oC
oC
Conditions
Thermal resistance - junction to
case
Mounting force
Weight
R(j-s)
P
W
0.022
0.044
oC/W Double sided cooled
Single sided cooled
19.5 26.7
kN
510 g
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data

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डाउनलोड[ N0882NC420 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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N0882NC420HIGH POWER THYRISTORYZPST
YZPST
N0882NC420Phase Control ThyristorWESTCODE
WESTCODE


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