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HY1804D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY1804D
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
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<?=HY1804D?> डेटा पत्रक पीडीएफ

HY1804D pdf
HY1804D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=32V
Rating
40
±20
175
-55 to 175
80
320**
80
54
62.5
31.2
2.4
110
340***
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) * Drain-Source On-state Resistance
Diode Characteristics
VSD *
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
HY1804
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
40 -
-V
VDS=40V, VGS=0V
TJ=85°C
-
-
-1
µA
- 30
VDS=VGS, IDS=250µA
1.0 2.0 3.0 V
VGS=±20V, VDS=0V
- - ±100 nA
VGS=10V, IDS=40A
- 4.0 5.0 m
VGS=4.5V, IDS=40A
4.6 6.0 m
ISD=40A, VGS=0V
IDS=40A, dlSD/dt=100A/µs
-
-
-
0.8 1.1 V
50 - ns
74 - nC
2

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डाउनलोड[ HY1804D Datasheet.PDF ]


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