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HY19P03 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY19P03
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
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<?=HY19P03?> डेटा पत्रक पीडीएफ

HY19P03 pdf
HY19P03 D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Drain Current-Continuous
Tc=25°C
Mounted on Large Heat Sink
IDM Pulsed Drain Current *
Tc=25°C
ID Continuous Drain Current
Tc=25°C
Tc=100°C
PD Maximum Power Dissipation
Tc=25°C
Tc=100°C
RJC Thermal Resistance, Junction-to-Case
RJA Thermal Resistance, Junction-to-Ambient **
EAS SinglePulsed-Avalanche Energy ***
L=0.3mH
Note: *
**
***
Repetitive rating; pulse width limited by max junction temperature.
Surface mounted on FR-4 board.
Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS=10V.
Rating
-30
±20
150
-55 to 150
-90
-360
-90
-59
50
20
2.5
110
358***
Unit
V
V
°C
°C
A
A
A
A
W
W
°C/W
°C/W
mJ
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
VGS(th)
IGSS
Gate Threshold Voltage
Gate-Source Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VSD*
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY19P03
Min Typ Max
Unit
VGS=0V,IDS=250uA
VDS=-30V, VGS=0V
TJ=55°C
VDS=VGS, IDS=250uA
VGS=±20V,VDS=0V
VGS=-10V,ID= -45A
VGS=-4.5V,ID= -45A
-30 -
-V
- - -1 uA
- - -10 uA
-1.0 -1.7 -3.0
V
- - ±100 nA
- 4.8 6 mΩ
6.4 8 mΩ
ISD= -45A,VGS=0V
ISD= -45A,dI/dt=100A/us
- -0.82 -1.3 V
- 25 - ns
- 20 - nC
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डाउनलोड[ HY19P03 Datasheet.PDF ]


शेयर लिंक


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