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HPA600R700DN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

भाग संख्या HPA600R700DN
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स HUAJING MICROELECTRONICS 
लोगो HUAJING MICROELECTRONICS लोगो 
पूर्व दर्शन
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<?=HPA600R700DN?> डेटा पत्रक पीडीएफ

HPA600R700DN pdf
HPA600R700DN
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =600V, VGS= 0V,
Ta = 25
VDS =480V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=20V, ID =5A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =10A VDD = 300V
RG =10VGS=10V
ID =10A VDD =480V
VGS = 10V
Rating
Min. Typ. Max.
600 -- --
-- 0.65 --
-- --
1
-- -- 100
-- -- 100
-- -- -100
Unit
s
V
V/
µA
µA
nA
nA
Rating
Min. Typ. Max.
-- 0.6 0.7
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max.
-- 8.5 --
-- 1496 --
-- 77.7 --
-- 23.8 --
Units
S
pF
Rating
Min. Typ. Max.
-- 23.2 --
-- 31.3 --
-- 37.2 --
-- 22.8 --
-- 26.0 --
-- 7.1 --
-- 9.8 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 17V0 1

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डाउनलोड[ HPA600R700DN Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
HPA600R700DNSilicon N-Channel Power MOSFETHUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS


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