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HPA650R420SA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

भाग संख्या HPA650R420SA
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स HUAJING MICROELECTRONICS 
लोगो HUAJING MICROELECTRONICS लोगो 
पूर्व दर्शन
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<?=HPA650R420SA?> डेटा पत्रक पीडीएफ

HPA650R420SA pdf
HPA650R420SA
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
Rating
Min. Typ. Max.
650 -- --
-- 0.65 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=5.5A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 0.35 0.42
24
Units
V
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VGS = 0V VDS = 25V
f = 1.0MHz
Rating
Min. Typ. Max.
-- 930 --
-- 685 --
-- 20 --
Units
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =11A VDD = 300V
RG =10
ID =11A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
-- 18 --
-- 32 --
-- 52 --
-- 25 --
-- 34 --
-- 6.4 --
-- 17 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 17V0 1

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डाउनलोड[ HPA650R420SA Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
HPA650R420SASilicon N-Channel Power MOSFETHUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS


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