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HPA700R1K3SA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

भाग संख्या HPA700R1K3SA
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स HUAJING MICROELECTRONICS 
लोगो HUAJING MICROELECTRONICS लोगो 
पूर्व दर्शन
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<?=HPA700R1K3SA?> डेटा पत्रक पीडीएफ

HPA700R1K3SA pdf
HPA700R1K3SA
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA
VDS = 700V, VGS= 0V,
Ta = 25
VDS =560V, VGS= 0V,
Ta = 125
VGS =+30V VDS= 0V,
VGS =-30V VDS= 0V,
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=2.8A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =6A VDD = 400V
VGS = 10V RG =10
ID = 6 A VDD =560V
VGS = 10V
R
Rating
Min. Typ. Max.
700 -- --
-- 0.67 --
-- -- 1
-- -- 10
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.95 1.3
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max
-- 416 --
-- 368 --
-- 13.8 --
Units
pF
Rating
Min. Typ. Max.
-- 15 --
-- 20 --
-- 38 --
-- 9 --
-- 16.9 --
-- 3 --
-- 9.2 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 16V0 1

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HPA700R1K3SASilicon N-Channel Power MOSFETHUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS


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