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HPA600R760MB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

भाग संख्या HPA600R760MB
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स HUAJING MICROELECTRONICS 
लोगो HUAJING MICROELECTRONICS लोगो 
पूर्व दर्शन
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<?=HPA600R760MB?> डेटा पत्रक पीडीएफ

HPA600R760MB pdf
HPA600R760MB
R
Electrical CharacteristicsTj= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 600V, VGS= 0V,
Tj = 25
VDS =480V, VGS= 0V,
Tj = 125
VGS =+20V VDS= 0V,
VGS =-20V VDS= 0V,
Rating
Min. Typ. Max.
600 -- --
-- 0.66 --
-- -- 1
-- -- 10
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=2.5A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 0.70 0.76
2.0 -- 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
Rg Gate resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
f = 1.0MHz
VGS = 0V VDS = 50V
f = 1.0MHz
Rating
Min. Typ. Max.
-- 4.5 --
-- 360 --
-- 78 --
-- 1.2 --
Units
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Vplateau
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Gate Plateau Voltage
Test Conditions
ID =5A VDD =400V
RG =10
ID =5A VDD =480V
VGS = 10V
Rating
Min. Typ. Max.
-- 11 --
-- 9.0 --
-- 19 --
-- 5.2 --
-- 11.9 --
-- 1.9 --
-- 7.1
-- 5.3
--
--
Units
ns
nC
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Page 2 of 10 201 8V0 1

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
HPA600R760MBSilicon N-Channel Power MOSFETHUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS


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