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GPT03N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER FIELD EFFECT TRANSISTOR - Greatpower

भाग संख्या GPT03N80
समारोह POWER FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Greatpower 
लोगो Greatpower लोगो 
पूर्व दर्शन
1 Page
		
<?=GPT03N80?> डेटा पत्रक पीडीएफ

GPT03N80 pdf
GPT03N80
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
GPT03N80GN220*
TO-220
GPT03N80GN220FP*
TO-220 Full Package
GPT03N80GN251*
TO-251
GPT03N80GN251S*
TO-251S
GPT03N80GN252*
TO-252
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen and Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS =650 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = - 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.5A) *
Forward Transconductance (VDS = 15 V, ID = 1.5 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 400 V, ID = 3.0 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 640 V, ID = 3.0 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 3.0 A,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width 300μs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT03N80
Min Typ Max
800
Units
V
10 uA
100 nA
100 nA
3 5V
2
535.2
40.6
3.56
15.1
14.3
30.7
20.5
15
2.83
7.63
5.2
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5
**
184
V
ns
ns
2013/10/19 Rev. 1.0
Greatpower Microelectronic Corp.
Page 2

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डाउनलोड[ GPT03N80 Datasheet.PDF ]


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