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GPT10N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER FIELD EFFECT TRANSISTOR - Greatpower

भाग संख्या GPT10N60
समारोह POWER FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Greatpower 
लोगो Greatpower लोगो 
पूर्व दर्शन
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<?=GPT10N60?> डेटा पत्रक पीडीएफ

GPT10N60 pdf
GPT10N60 / GPT10N60D
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
GPT10N60GN220
GPT10N60DGN220FP
*Note: G : Suffix for Pb Free Product
Package
TO-220
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 5A) *
Forward Transconductance (VDS = 15 V, ID = 5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 10 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 480 V, ID = 10 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 10A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT10N60
Min Typ Max
600
1
100
100
345
8
1467
135
9.3
26.6
20.8
48
25.6
32.4
6.61
12.7
0.76
1.5
**
412
Units
V
uA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
2013/7/8 V1.6
Greatpower Microelectronic Corp.
Page 2

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डाउनलोड[ GPT10N60 Datasheet.PDF ]


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