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GPT04N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER FIELD EFFECT TRANSISTOR - Greatpower

भाग संख्या GPT04N60
समारोह POWER FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Greatpower 
लोगो Greatpower लोगो 
पूर्व दर्शन
1 Page
		
<?=GPT04N60?> डेटा पत्रक पीडीएफ

GPT04N60 pdf
GPT04N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
GPT04N60GN220*
TO-220
GPT04N60GN220FP*
TO-220 Full Package
GPT04N60GN251*
TO-251
GPT04N60GN252*
*Note: G : Suffix for Pb Free Product
TO-252
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS =600 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = - 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) *
Forward Transconductance (VDS = 15 V, ID = 2.0 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 4.0 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 480 V, ID = 4.0 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 4.0 A,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT04N60
Min Typ Max
600
Units
V
1 uA
100 nA
100 nA
2.5 3.5 4.5
V
4
553
52.2
4.2
18.7
16
33.6
17.1
13.4
3
6.3
2.6
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5
**
220
V
ns
ns
2013/6/26 Rev. 1.7
Greatpower Microelectronic Corp.
Page 2

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डाउनलोड[ GPT04N60 Datasheet.PDF ]


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