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GPT10N45D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER FIELD EFFECT TRANSISTOR - Greatpower

भाग संख्या GPT10N45D
समारोह POWER FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Greatpower 
लोगो Greatpower लोगो 
पूर्व दर्शन
1 Page
		
<?=GPT10N45D?> डेटा पत्रक पीडीएफ

GPT10N45D pdf
ORDERING INFORMATION
Part Number
GPT10N45DGN220F*
GPT10N45GN220*
*Note: G : Suffix for PB Free Product
Package
TO-220F
TO-220
GPT10N45 GPT10N45D
POWER FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 450 V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 5A) *
Forward Transconductance (VDS = 50 V, ID = 5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 225 V, ID = 10 A,
RD = 17Ω,
RG = 6.2Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 360 V, ID = 10 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS =5 A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
GPT10N45
Min Typ Max
450
1
100
100
2.5 4.5
7.5
1284
143
7.61
22.1
22
42.4
17.9
26.5
7.15
10.1
0.6
1.5
**
354
Units
V
µA
nA
nA
V
S
pF
pF
pF
ns
ns
Ns
Ns
nC
nC
nC
V
ns
ns
2013/7/19 Rev1.0
Greatpower Microelectronic Corp.
Page 2

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डाउनलोड[ GPT10N45D Datasheet.PDF ]


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