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HY1908S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY1908S
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
पूर्व दर्शन
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<?=HY1908S?> डेटा पत्रक पीडीएफ

HY1908S pdf
HY1908D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
80
±25
175
-55 to 175
90
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
315**
90
59
64
32
2.35
110
EAS Avalanche Energy, Single Pulsed
L=0.5mH
214***
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=64V
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=45A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=45A, VGS=0V
ISD=45A, dlSD/dt=100A/µs
HY1908
Min. Typ. Max.
80 -
-
- -1
- - 10
234
- - ±100
- 7.8 9.0
- 0.8 1.2
- 30 -
- 25 -
Unit
V
µA
V
nA
m
V
ns
nC
2

विन्यास 12 पेज
डाउनलोड[ HY1908S Datasheet.PDF ]


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