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S90N030S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - SI-TECH

भाग संख्या S90N030S
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स SI-TECH 
लोगो SI-TECH लोगो 
पूर्व दर्शन
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<?=S90N030S?> डेटा पत्रक पीडीएफ

S90N030S pdf
SI-TECH SEMICONDUCTOR CO.,LTD
S90N030R/S
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=250uA
VDS=72V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDD=40V
VGS=10V
ID=50A
(Note 3)
VDD=40V,VGS=10V
ID=45A,RG=3
TC=25
(Note 3)
VDS=0V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
90 -
-V
- - 1 uA
- - 100 nA
- - -100 nA
2.2 3 3.8 V
- 3 3.6 m
- 72 - nC
- 21
- nC
- 17
- nC
- 30 - ns
- 49 - ns
- 53 - ns
- 30 - ns
- 4520 -
pF
- 1420 -
pF
- 35 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=45A
tr r Reverse Recovery Time
VGS=0V, IS=45A
Qr r Reverse Recovery Charge
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, VDD=50V, RG=25 Ω, Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 190 A
- - 760 A
- 0.9 1.2 V
- 69
- ns
- 83
- nC
- 2 - Apr.2017

विन्यास 8 पेज
डाउनलोड[ S90N030S Datasheet.PDF ]


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