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2N7002KU डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron Semiconductor

भाग संख्या 2N7002KU
समारोह MOSFET
मैन्युफैक्चरर्स Silikron Semiconductor 
लोगो Silikron Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=2N7002KU?> डेटा पत्रक पीडीएफ

2N7002KU pdf
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
td(on)
td(off)
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Turn-on delay time
Turn-Off delay time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
60
1
Typ.
1.6
40
16.6
9.5
Max.
3
3.5
2.5
1
±100
±10
25
45
Units
V
Ω
V
μA
nA
uA
ns
pF
2N7002KU
Conditions
VGS = 0V, ID = 250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS = VGS, ID = 250μA
VDS = 60V,VGS = 0V
VGS=±5V,VDS=0V
VGS=±20V,VDS=0V
VGS=10V, VDS=30V,
ID=0.2A,RGEN=10Ω
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
Typ.
Max.
0.3
— — 1.2
— — 1.3
Units
A
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=0.2A, VGS=0V
©Silikron Semiconductor CO., LTD.
2012.04.20
www.silikron.com
Version: 1.0
page 2 of 7

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