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2N7002K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron Semiconductor

भाग संख्या 2N7002K
समारोह MOSFET
मैन्युफैक्चरर्स Silikron Semiconductor 
लोगो Silikron Semiconductor लोगो 
पूर्व दर्शन
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<?=2N7002K?> डेटा पत्रक पीडीएफ

2N7002K pdf
2N7002K
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-Off Delay Time
Total Gate Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
IDSS
IGSS
BVGSO
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
td(off)
Qg
VSD
VDS=60V,VGS=0V
VGS=±5V,VDS=0V
VGS=±10V,VDS=0V
VGS=±20V,VDS=0V
VDS=0V, IG=±250uA
VDS=VGS,ID=250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V,ID=0.2A
±20
1
0.08
VDS=25V,VGS=0V,
F=1.0MHz
30
6
3
VDD=30V,VGS=10V,
RGEN=10ΩRL=150Ω
ID=0.2A
VDS=10V,ID=0.25A,VGS=4.5V
0.4
VGS=0V,IS=0.2A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
1
100
150
10
2.5
3
3.5
25
35
0.6
1.3
μA
nA
nA
uA
V
V
Ω
S
PF
PF
PF
nS
nS
nC
V
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v2.4

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