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BSS138 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron Semiconductor

भाग संख्या BSS138
समारोह MOSFET
मैन्युफैक्चरर्स Silikron Semiconductor 
लोगो Silikron Semiconductor लोगो 
पूर्व दर्शन
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<?=BSS138?> डेटा पत्रक पीडीएफ

BSS138 pdf
BSS138
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=50V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
BVGSO
VDS=0V, IG=±250uA
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250uA
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
gFS VDS=10V,ID=0.22A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
TurnOn Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,VGS=10V,
RGEN=6ΩID=0.22A
TurnOff Fall Time
tf
Total Gate Charge
Qg
GateSource Charge
Qgs VDS=25V,ID=0.22A,VGS=10V
GateDrain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=0.44A
Min
50
±20
0.8
Typ
0.1
30
15
6
2.6
9
20
6
1.7
0.1
0.4
Max
1
10
1.5
3.5
6
2.4
1.4
Unit
V
μA
uA
V
V
Ω
S
PF
nS
nC
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v2.3

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