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SSF2315 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron Semiconductor

भाग संख्या SSF2315
समारोह MOSFET
मैन्युफैक्चरर्स Silikron Semiconductor 
लोगो Silikron Semiconductor लोगो 
पूर्व दर्शन
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<?=SSF2315?> डेटा पत्रक पीडीएफ

SSF2315 pdf
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
-20
-0.5
Typ.
95
128
8.5
1.2
2.1
7.2
36
53
56
560
80
70
Max.
130
160
-1.0
-1
100
-100
Units
V
m
V
μA
nA
nC
ns
pF
SSF2315
Conditions
VGS = 0V, ID = -250μA
VGS=-4.5V,ID = -2.8A
VGS=-2.5V,ID = -2A
VDS = VGS, ID = -250μA
VDS = -20V,VGS = 0V
VGS =12V
VGS = -12V
ID = -3A,
VDS= -10V,
VGS = -4.5V
VGS=-4.5V, VDS=-10V,
ID=-3A ,RGEN=3
VGS = 0V
VDS = -10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
-3
— — -15
— — -1.2
— 37 —
— 27 —
Units
A
A
V
ns
nC
Conditions
MOSFET symbol D
showing the
G
integral reverse
p-n junction diode.
S
IS=-1A, VGS=0V
TJ = 25°C, IF =-4A,
di/dt = 100A/μs
©Silikron Semiconductor CO., LTD.
2012.11.29
www.silikron.com
Version: 1.0P
page 2 of 6

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