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2SC1213 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Epitaxial Transistor - Renesas

भाग संख्या 2SC1213
समारोह Silicon NPN Epitaxial Transistor
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=2SC1213?> डेटा पत्रक पीडीएफ

2SC1213 pdf
2SC1213, 2SC1213A
Preliminary
Electrical Characteristics
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
DC current transfer ratio
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE*1
hFE
2SC1213
Min Typ Max
35 — —
35 — —
4 ——
— — 0.5
60 — 320
10 — —
2SC1213A
Min Typ Max
50 —
50 —
4 ——
— — 0.5
60 — 320
10 — —
Collector to emitter
saturation voltage
VCE(sat)
0.2
0.6
0.2
Base to emitter voltage
VBE
— 0.64 —
— 0.64
Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.
2. Pulse test
B CD
60 to 120 100 to 200 160 to 320
0.6
(Ta = 25°C)
Unit Test conditions
V IC = 10 μA, IE = 0
V IC = 1 mA, RBE =
V IE = 10 μA, IC = 0
μA VCB = 20 V, IE = 0
VCE = 3 V, IC =10 mA
VCE = 3 V,
IC = 500 mA*2
V IC = 150 mA,
IB = 15 mA*2
V VCE = 3 V, IC = 10 mA
R07DS0431EJ0300 Rev.3.00
Jun 07, 2011
Page 2 of 4

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